digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MCR265 series thyristors scrs/55 amps/50-800 volts available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings (t j =25c unless otherwise noted) rating symbol value unit peak reverse blocking voltage (1) MCR265-2 MCR265-4 MCR265-6 MCR265-8 MCR265-10 v rrm 50 200 400 600 800 volts forward current (t c =70c) (all conduction angles) i t(rms) i t(av) 55 35 amps peak non-repetitive surge current ? 8.3 ms (1/2 cycle, sine wave) i tsm 550 amps forward peak gate power p gm 20 watts forward average gate power p g(av) 0.5 watt forward peak gate current (300 s, 120 pps) l gm 2.0 amps operating junction temperature range t j -40 to +125 c storage temperature range t stg -40 to +150 c 1. v rrm for all types can be applied on a continuous basis. ratings appl y for zero or negative voltage, however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. these devices are rated for use in applications subject to high surge conditions. care must be taken to ensure proper heat sin king when the device is to be used at high sustained currents. thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.9 c/w thermal resistance, junction to ambient r ja 60 c/w electrical characteristics (t c = 25c unless otherwise noted) characteristic symbol min typ max unit peak forward blocking voltage (t j = 125c) MCR265-2 MCR265-4 MCR265-6 MCR265-8 MCR265-10 v drm 50 200 400 600 800 - - - - - - - - - - volts peak forward blocking current (rated v drm @ t j = 125c) i drm - - 2.0 ma peak reverse blocking current (rated v rrm @ t j = 125c) i rrm - - 2.0 ma forward ?on? voltage (1) (i tm = 110a) v tm - 1.5 1.9 volts gate trigger current (continuous dc) (anode voltage = 12vdc, r l = 100ohms) (t c = -40c) i gt - - 20 40 50 90 ma gate trigger voltage (continuous dc) (anode voltage = 12vdc, r l = 100ohms) v gt - 1.0 1.5 volts gate non-trigger voltage (anode voltage = rated v drm , r l = 100ohms, t j = 125c) v gd 0.2 - - volts sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 1. pulse width 300 s, duty cycle 2% MCR265 series thyristors scrs/55 amps/50-800 volts electrical characteristics (t c = 25c unless otherwise noted) characteristic symbol min typ max unit holding current (anode voltage = 12vdc) i h - 30 75 ma turn-on time (i tm = 55a, i gt = 200madc) t gt - 1.5 - s critical rate of rise of off-state voltage (gate open, rated v drm , exponential waveform) dv/dt - 50 - v/s mechanical characteristics case to-220ab marking alpha-numeric pin out see below sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MCR265 series thyristors scrs/55 amps/50-800 volts sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
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